Dedicated to sourcing hard-to-find chips

5G and Automotive Electronics Power The third generation semiconductor materials market has expanded

发表时间:2018-09-11 15:33

Tupu   Industry Research Institute pointed out that compared with the current mainstream silicon wafers (Si), the third generation of semiconductor materials SiC and GaN in addition to high voltage resistance characteristics, but also have high temperature and suitable for high frequency operation advantages, not only can make the chip area can be greatly reduced, and can simplify the design of peripheral circuits, to reduce the module, system surrounding components and cooling system volume. In addition to lightweight vehicle design, the low on-resistance and low switching loss characteristics of third-generation semiconductors can also significantly reduce energy conversion losses while the vehicle is running, both of which can be of considerable help to improve the battery life of electric vehicles. As a result, the technology and market development of SiC and GaN power components are closely related to the development of electric vehicles.

However, SiC materials are still in the validation and import phase, at this stage the auto industry is only used in racing cars, so the world's current auto power components, the use of SiC solutions in less than one thousandth of the area. On the other hand, the current market GaN power components are GaN-on-SiC and GN-on-Si two wafers manufactured, of which GaN-on-SiC in thermal performance advantages, quite suitable for applications in high temperature, high frequency operating environment, so the application visibility of 5G base station is high, it is expected that the SiC substrate in the next five years through the factory verification and 2020 5G commercial drive, will enter high-speed into a long-term.

Although the GaN substrate in the process of large-scale area, the cost is high, resulting in the output value of the GaN substrate is still smaller than the SiC substrate. But the advantages of GaN in high-frequency operation are still the focus of attention of major technology manufacturers. In addition to the high-spec products using GaN-on-SiC technology, GaN-on-Si through its cost advantages, GaN-on-Si has become the current Gam power components market mainstream, in the auto, smartphone power management chips and charging system applications have grown.

TuPu Industry Research Institute pointed out that, observing the development of the supply chain, because 5G and automotive technology is in the center of the industry growth trend, the supply chain has developed a wafer contract model, providing customers SiC and GaN contract business services, changing the past only by Cree, Infineon, Qorvo and other integrated components of the supply of large factories. GaN's section, TSMC and the world's leading contract business providing Gan-on-Si, is dedicated to the Gan-on-SiC field aimed at 5G base station business opportunities. In addition, X-Fab, Han Lei and Hoi Yu also offer SiC and GaN contract businesses. With the development of contract business, the market size of third-generation semiconductor materials will be further expanded.



22E, Block C, Huaqiang Plaza, Futian District, Shenzhen, China